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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V - IRFBC40

N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V - IRFBC40
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.74$ 2.96$
5 - 9 2.60$ 2.81$
10 - 24 2.52$ 2.72$
25 - 48 2.46$ 2.66$
Quantity U.P
1 - 4 2.74$ 2.96$
5 - 9 2.60$ 2.81$
10 - 24 2.52$ 2.72$
25 - 48 2.46$ 2.66$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 48
Set of 1

N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V - IRFBC40. N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 15/06/2025, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 8
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N-channel transistor, 5A, 8A, 8A, 0.9 Ohms, TO-220, 600V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss ...
BUZ91A
N-channel transistor, 5A, 8A, 8A, 0.9 Ohms, TO-220, 600V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 0.9 Ohms. Housing: TO-220. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS
BUZ91A
N-channel transistor, 5A, 8A, 8A, 0.9 Ohms, TO-220, 600V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 0.9 Ohms. Housing: TO-220. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS
Set of 1
3.41$ VAT incl.
(3.15$ excl. VAT)
3.41$

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