N-channel transistor, 3A, 5.2A, 250uA, 0.045 Ohms, SOT-223 ( TO-226 ), SOT-223, 55V - IRFL4105PBF

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Quantity	excl. VAT	VAT incl.
1 - 4	1.78$	1.92$
5 - 9	1.69$	1.83$
10 - 24	1.60$	1.73$
25 - 49	1.25$	1.35$
50 - 99	1.22$	1.32$
100 - 249	1.19$	1.29$
250 - 359	1.18$	1.28$

Quantity	U.P
1 - 4	1.78$	1.92$
5 - 9	1.69$	1.83$
10 - 24	1.60$	1.73$
25 - 49	1.25$	1.35$
50 - 99	1.22$	1.32$
100 - 249	1.19$	1.29$
250 - 359	1.18$	1.28$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 359

Set of 1

N-channel transistor, 3A, 5.2A, 250uA, 0.045 Ohms, SOT-223 ( TO-226 ), SOT-223, 55V - IRFL4105PBF. N-channel transistor, 3A, 5.2A, 250uA, 0.045 Ohms, SOT-223 ( TO-226 ), SOT-223, 55V. ID (T=100°C): 3A. ID (T=25°C): 5.2A. Idss (max): 250uA. On-resistance Rds On: 0.045 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 55V. RoHS: yes. C(in): 660pF. Cost): 230pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 30A. IDss (min): 25uA. IGF: 660pF. Number of terminals: 4. Pd (Power Dissipation, Max): 2.1W. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 29/04/2025, 10:25.

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