Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 7.72$ | 8.35$ |
2 - 2 | 7.34$ | 7.93$ |
3 - 4 | 6.95$ | 7.51$ |
5 - 9 | 6.56$ | 7.09$ |
10 - 19 | 6.41$ | 6.93$ |
20 - 29 | 6.26$ | 6.77$ |
30 - 32 | 6.02$ | 6.51$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 7.72$ | 8.35$ |
2 - 2 | 7.34$ | 7.93$ |
3 - 4 | 6.95$ | 7.51$ |
5 - 9 | 6.56$ | 7.09$ |
10 - 19 | 6.41$ | 6.93$ |
20 - 29 | 6.26$ | 6.77$ |
30 - 32 | 6.02$ | 6.51$ |
N-channel transistor, 13A, 22A, 250uA, 0.23 Ohms, TO-247, TO-247AC, 500V - IRFP22N50A. N-channel transistor, 13A, 22A, 250uA, 0.23 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 13A. ID (T=25°C): 22A. Idss (max): 250uA. On-resistance Rds On: 0.23 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 3450pF. Cost): 513pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: SMPS MOSFET. Id(imp): 88A. IDss (min): 25uA. Pd (Power Dissipation, Max): 277W. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 26 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 29/04/2025, 12:25.
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