Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.72$ | 14.83$ |
2 - 2 | 13.03$ | 14.09$ |
3 - 4 | 12.35$ | 13.35$ |
5 - 9 | 11.66$ | 12.60$ |
10 - 19 | 11.39$ | 12.31$ |
20 - 20 | 11.11$ | 12.01$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.72$ | 14.83$ |
2 - 2 | 13.03$ | 14.09$ |
3 - 4 | 12.35$ | 13.35$ |
5 - 9 | 11.66$ | 12.60$ |
10 - 19 | 11.39$ | 12.31$ |
20 - 20 | 11.11$ | 12.01$ |
N-channel transistor, 18A, 27A, 250uA, 0.18 Ohms, TO-247, TO-247AC, 600V - IRFP27N60KPBF. N-channel transistor, 18A, 27A, 250uA, 0.18 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 18A. ID (T=25°C): 27A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 4660pF. Cost): 460pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 620 ns. Type of transistor: MOSFET. Function: SMPS MOSFET, Low Gate Charge. Id(imp): 110A. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 500W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 27 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 17:25.
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