Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.28$ | 11.11$ |
2 - 2 | 9.77$ | 10.56$ |
3 - 4 | 9.25$ | 10.00$ |
5 - 9 | 8.74$ | 9.45$ |
10 - 19 | 8.53$ | 9.22$ |
20 - 29 | 8.33$ | 9.00$ |
30 - 65 | 8.02$ | 8.67$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.28$ | 11.11$ |
2 - 2 | 9.77$ | 10.56$ |
3 - 4 | 9.25$ | 10.00$ |
5 - 9 | 8.74$ | 9.45$ |
10 - 19 | 8.53$ | 9.22$ |
20 - 29 | 8.33$ | 9.00$ |
30 - 65 | 8.02$ | 8.67$ |
N-channel transistor, 148A, 209A, 250uA, 3.6m Ohms, TO-247, TO-247AC, 75V - IRFP2907. N-channel transistor, 148A, 209A, 250uA, 3.6m Ohms, TO-247, TO-247AC, 75V. ID (T=100°C): 148A. ID (T=25°C): 209A. Idss (max): 250uA. On-resistance Rds On: 3.6m Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 75V. C(in): 13000pF. Cost): 2100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 870A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 470W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 23 ns. Technology: HEXFET ® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 28/04/2025, 00:25.
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