Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 11.50$ | 12.43$ |
2 - 2 | 10.92$ | 11.80$ |
3 - 4 | 10.35$ | 11.19$ |
5 - 9 | 9.77$ | 10.56$ |
10 - 19 | 9.54$ | 10.31$ |
20 - 29 | 9.31$ | 10.06$ |
30 - 46 | 8.97$ | 9.70$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 11.50$ | 12.43$ |
2 - 2 | 10.92$ | 11.80$ |
3 - 4 | 10.35$ | 11.19$ |
5 - 9 | 9.77$ | 10.56$ |
10 - 19 | 9.54$ | 10.31$ |
20 - 29 | 9.31$ | 10.06$ |
30 - 46 | 8.97$ | 9.70$ |
N-channel transistor, 66A, 94A, 250uA, 0.023 Ohms, TO-247, TO-247AC, 200V - IRFP90N20D. N-channel transistor, 66A, 94A, 250uA, 0.023 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 66A. ID (T=25°C): 94A. Idss (max): 250uA. On-resistance Rds On: 0.023 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 1070pF. Cost): 6040pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 380A. IDss (min): 25uA. Pd (Power Dissipation, Max): 580W. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 03:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.