Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 7.10$ | 7.68$ |
5 - 9 | 6.74$ | 7.29$ |
10 - 24 | 6.53$ | 7.06$ |
25 - 49 | 6.25$ | 6.76$ |
50 - 99 | 6.03$ | 6.52$ |
100 - 127 | 5.37$ | 5.80$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 7.10$ | 7.68$ |
5 - 9 | 6.74$ | 7.29$ |
10 - 24 | 6.53$ | 7.06$ |
25 - 49 | 6.25$ | 6.76$ |
50 - 99 | 6.03$ | 6.52$ |
100 - 127 | 5.37$ | 5.80$ |
N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V - IRFPE50. N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 7.8A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 3100pF. Cost): 800pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 31A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 16/06/2025, 01:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.