N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V - IRFS630A

Quantity	excl. VAT	VAT incl.
1 - 4	1.70$	1.84$
5 - 9	1.61$	1.74$
10 - 24	1.56$	1.69$
25 - 49	1.53$	1.65$
50 - 99	1.50$	1.62$
100 - 249	1.44$	1.56$
250 - 396	1.39$	1.50$

Quantity	U.P
1 - 4	1.70$	1.84$
5 - 9	1.61$	1.74$
10 - 24	1.56$	1.69$
25 - 49	1.53$	1.65$
50 - 99	1.50$	1.62$
100 - 249	1.44$	1.56$
250 - 396	1.39$	1.50$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 396

Set of 1

N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V - IRFS630A. N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Function: Advanced Power MOSFET. G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Fairchild. Quantity in stock updated on 26/07/2025, 20:25.

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