Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.39$ | 2.58$ |
5 - 9 | 2.27$ | 2.45$ |
10 - 24 | 2.15$ | 2.32$ |
25 - 49 | 2.03$ | 2.19$ |
50 - 99 | 1.99$ | 2.15$ |
100 - 228 | 1.83$ | 1.98$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.39$ | 2.58$ |
5 - 9 | 2.27$ | 2.45$ |
10 - 24 | 2.15$ | 2.32$ |
25 - 49 | 2.03$ | 2.19$ |
50 - 99 | 1.99$ | 2.15$ |
100 - 228 | 1.83$ | 1.98$ |
N-channel transistor, 21A, 30A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V - IRL540N. N-channel transistor, 21A, 30A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1800pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 60.4k Ohms. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 15:25.
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