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N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V - IXTQ88N30P

N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V - IXTQ88N30P
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Quantity excl. VAT VAT incl.
1 - 1 19.54$ 21.12$
2 - 2 18.56$ 20.06$
3 - 4 17.58$ 19.00$
5 - 9 16.61$ 17.96$
10 - 14 16.22$ 17.53$
15 - 19 15.82$ 17.10$
20 - 36 15.24$ 16.47$
Quantity U.P
1 - 1 19.54$ 21.12$
2 - 2 18.56$ 20.06$
3 - 4 17.58$ 19.00$
5 - 9 16.61$ 17.96$
10 - 14 16.22$ 17.53$
15 - 19 15.82$ 17.10$
20 - 36 15.24$ 16.47$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 36
Set of 1

N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V - IXTQ88N30P. N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 75A. ID (T=25°C): 88A. Idss (max): 1mA. On-resistance Rds On: 40m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 6300pF. Cost): 950pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 220A. IDss (min): 100uA. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 25 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 01:25.

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