Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 19.54$ | 21.12$ |
2 - 2 | 18.56$ | 20.06$ |
3 - 4 | 17.58$ | 19.00$ |
5 - 9 | 16.61$ | 17.96$ |
10 - 14 | 16.22$ | 17.53$ |
15 - 19 | 15.82$ | 17.10$ |
20 - 36 | 15.24$ | 16.47$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 19.54$ | 21.12$ |
2 - 2 | 18.56$ | 20.06$ |
3 - 4 | 17.58$ | 19.00$ |
5 - 9 | 16.61$ | 17.96$ |
10 - 14 | 16.22$ | 17.53$ |
15 - 19 | 15.82$ | 17.10$ |
20 - 36 | 15.24$ | 16.47$ |
N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V - IXTQ88N30P. N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 75A. ID (T=25°C): 88A. Idss (max): 1mA. On-resistance Rds On: 40m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 6300pF. Cost): 950pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 220A. IDss (min): 100uA. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 25 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 01:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.