Electronic components and equipment, for businesses and individuals

MBRS360T3G

MBRS360T3G
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Quantity excl. VAT VAT incl.
1 - 9 0.90$ 0.97$
10 - 24 0.86$ 0.93$
25 - 49 0.81$ 0.88$
50 - 99 0.77$ 0.83$
100 - 249 0.71$ 0.77$
250 - 499 0.69$ 0.75$
500 - 1148 0.66$ 0.71$
Quantity U.P
1 - 9 0.90$ 0.97$
10 - 24 0.86$ 0.93$
25 - 49 0.81$ 0.88$
50 - 99 0.77$ 0.83$
100 - 249 0.71$ 0.77$
250 - 499 0.69$ 0.75$
500 - 1148 0.66$ 0.71$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1148
Set of 1

MBRS360T3G. Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 60V. RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B36. Equivalents: Vishay VS-MBRS360-M3/9AT. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C). Quantity in stock updated on 28/04/2025, 18:25.

Equivalent products :

Quantity in stock : 812
SS36-E3

SS36-E3

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (...
SS36-E3
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMA) 7.11x6.22mm. VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. MRI (max): 10mA. MRI (min): 500uA. Marking on the case: SS36. Equivalents: SS36-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)
SS36-E3
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMA) 7.11x6.22mm. VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. MRI (max): 10mA. MRI (min): 500uA. Marking on the case: SS36. Equivalents: SS36-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)
Set of 1
0.64$ VAT incl.
(0.59$ excl. VAT)
0.64$
Quantity in stock : 2478
MBRS3100T3G

MBRS3100T3G

Forward current (AV): 3A. IFSM: 130A. Housing: DO-214. Housing (according to data sheet): SMC CASE 4...
MBRS3100T3G
Forward current (AV): 3A. IFSM: 130A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B310. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. Spec info: Vf 0.79V/3A, (iF=3.0A, TJ=25°C)
MBRS3100T3G
Forward current (AV): 3A. IFSM: 130A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B310. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. Spec info: Vf 0.79V/3A, (iF=3.0A, TJ=25°C)
Set of 1
1.08$ VAT incl.
(1.00$ excl. VAT)
1.08$

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