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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 10A, TO-220, TO-220AB, 60V - MJE2955T-CDIL

NPN-Transistor, 10A, TO-220, TO-220AB, 60V - MJE2955T-CDIL
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.12$ 1.21$
5 - 9 1.06$ 1.15$
10 - 24 1.01$ 1.09$
25 - 49 0.95$ 1.03$
50 - 94 0.93$ 1.01$
Quantity U.P
1 - 4 1.12$ 1.21$
5 - 9 1.06$ 1.15$
10 - 24 1.01$ 1.09$
25 - 49 0.95$ 1.03$
50 - 94 0.93$ 1.01$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 94
Set of 1

NPN-Transistor, 10A, TO-220, TO-220AB, 60V - MJE2955T-CDIL. NPN-Transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no. Quantity in stock updated on 28/04/2025, 03:25.

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Quantity in stock : 492
MJE2955T

MJE2955T

NPN-Transistor, TO-220, 10A, TO-220AB, 60V. Housing: TO-220. Collector current: 10A. Housing (accord...
MJE2955T
NPN-Transistor, TO-220, 10A, TO-220AB, 60V. Housing: TO-220. Collector current: 10A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. Resistor B: Power Transistor. BE resistor: -70V. C(in): -10A. Cost): 90W. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no
MJE2955T
NPN-Transistor, TO-220, 10A, TO-220AB, 60V. Housing: TO-220. Collector current: 10A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. Resistor B: Power Transistor. BE resistor: -70V. C(in): -10A. Cost): 90W. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no
Set of 1
1.14$ VAT incl.
(1.05$ excl. VAT)
1.14$

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