MOSFET transistor HGTG30N60B3D

Quantity	excl. VAT	VAT incl.
1 - 1	16.28$	17.60$
2 - 2	15.46$	16.71$
3 - 4	15.14$	16.37$
5 - 9	14.65$	15.84$
10 - 14	14.32$	15.48$
15 - 19	13.83$	14.95$
20 - 21	13.35$	14.43$

Quantity	U.P
1 - 1	16.28$	17.60$
2 - 2	15.46$	16.71$
3 - 4	15.14$	16.37$
5 - 9	14.65$	15.84$
10 - 14	14.32$	15.48$
15 - 19	13.83$	14.95$
20 - 21	13.35$	14.43$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 21

Set of 1

MOSFET transistor HGTG30N60B3D. MOSFET transistor. CE diode: no. Channel type: N-P. Function: Ic 30A @ 25°C, 25A @ 110°C, Icm 220A (pulsed). Germanium diode: no. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 137 ns. Td(on): 36ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.45V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.2V. Gate/emitter voltage VGE(th)max.: 6V. Original product from manufacturer Fairchild. Quantity in stock updated on 15/06/2025, 18:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!