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MOSFET transistor HGTG40N60B3

MOSFET transistor HGTG40N60B3
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Quantity excl. VAT VAT incl.
1 - 1 21.27$ 22.99$
2 - 2 20.21$ 21.85$
3 - 4 19.78$ 21.38$
5 - 9 19.14$ 20.69$
10 - 14 18.72$ 20.24$
15 - 19 18.08$ 19.54$
20 - 30 17.44$ 18.85$
Quantity U.P
1 - 1 21.27$ 22.99$
2 - 2 20.21$ 21.85$
3 - 4 19.78$ 21.38$
5 - 9 19.14$ 20.69$
10 - 14 18.72$ 20.24$
15 - 19 18.08$ 19.54$
20 - 30 17.44$ 18.85$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 30
Set of 1

MOSFET transistor HGTG40N60B3. MOSFET transistor. CE diode: no. Channel type: N-P. Function: Ic 70A @ 25°C, 40A @ 110°C, Icm 330A (pulsed). Germanium diode: no. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 47 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Original product from manufacturer Fairchild. Quantity in stock updated on 15/06/2025, 17:25.

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