N-channel transistor 2N7002, SOT-23 ( TO-236 ), 60V, 60V, 0.075A, 0.115A, 500uA, 7.5 Ohms, SOT-23 ( TO236 ), 60V

N-channel transistor 2N7002, SOT-23 ( TO-236 ), 60V, 60V, 0.075A, 0.115A, 500uA, 7.5 Ohms, SOT-23 ( TO236 ), 60V

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Unit price
10-49
0.0705$
50-99
0.0595$
100-199
0.0517$
200+
0.0421$
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Quantity in stock: 1347
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N-channel transistor 2N7002, SOT-23 ( TO-236 ), 60V, 60V, 0.075A, 0.115A, 500uA, 7.5 Ohms, SOT-23 ( TO236 ), 60V. Housing: SOT-23 ( TO-236 ). Vdss (Drain to Source Voltage): 60V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. ID (T=100°C): 0.075A. ID (T=25°C): 0.115A. Idss (max): 500uA. On-resistance Rds On: 7.5 Ohms. Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 50pF. Channel type: N. Ciss Gate Capacitance [pF]: 50pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Cost): 25pF. Drain current Id (A) @ 25°C: 0.280A. Drain current through resistor Rds [Ohm] @ Ids [A]: 7 Ohms @ 0.05A. Drain-source protection: diode. Features: -. Function: Small Signal MOSFET transistor. G-S Protection: no. Gate breakdown voltage Ugs [V]: 2.5V. Gate/source voltage Vgs max: -30V. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id @ Tc=25°C (Continuous Drain Current): 0.28A. Id(imp): 0.8A. Information: -. MSL: 1. Manufacturer's marking: 72. Marking on the case: 702. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.35W. Mounting Type: SMD. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.25W. Polarity: MOSFET N. Qg (Total Gate Charge, Max @ Vgs): -. Quantity per case: 1. Rds On (Max) @ Id, Vgs: 5 Ohms / 500mA / 10V. RoHS: yes. Series: -. Spec info: 702. Switch-off delay tf[nsec.]: 20 ns. Switch-on time ton [nsec.]: 20 ns. Td(off): 40 ns. Td(on): 20 ns. Technology: V-MOS. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 31/10/2025, 09:31

Technical documentation (PDF)
2N7002
51 parameters
Housing
SOT-23 ( TO-236 )
Vdss (Drain to Source Voltage)
60V
Drain-source voltage Uds [V]
60V
ID (T=100°C)
0.075A
ID (T=25°C)
0.115A
Idss (max)
500uA
On-resistance Rds On
7.5 Ohms
Housing (according to data sheet)
SOT-23 ( TO236 )
Voltage Vds(max)
60V
Assembly/installation
surface-mounted component (SMD)
C(in)
50pF
Channel type
N
Ciss Gate Capacitance [pF]
50pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Cost)
25pF
Drain current Id (A) @ 25°C
0.280A
Drain current through resistor Rds [Ohm] @ Ids [A]
7 Ohms @ 0.05A
Drain-source protection
diode
Function
Small Signal MOSFET transistor
G-S Protection
no
Gate breakdown voltage Ugs [V]
2.5V
Gate/source voltage Vgs max
-30V
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id @ Tc=25°C (Continuous Drain Current)
0.28A
Id(imp)
0.8A
MSL
1
Manufacturer's marking
72
Marking on the case
702
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.35W
Mounting Type
SMD
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.25W
Polarity
MOSFET N
Quantity per case
1
Rds On (Max) @ Id, Vgs
5 Ohms / 500mA / 10V
RoHS
yes
Spec info
702
Switch-off delay tf[nsec.]
20 ns
Switch-on time ton [nsec.]
20 ns
Td(off)
40 ns
Td(on)
20 ns
Technology
V-MOS
Type of transistor
MOSFET
Vgs(th) min.
1V
Original product from manufacturer
ON Semiconductor
Minimum quantity
10