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N-channel transistor, 6A, 300uA, 0.95 Ohms, TO-220FP, TO-220FP, 600V - 2SK1118-PMC

N-channel transistor, 6A, 300uA, 0.95 Ohms, TO-220FP, TO-220FP, 600V - 2SK1118-PMC
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Quantity excl. VAT VAT incl.
1 - 4 4.01$ 4.33$
5 - 9 3.81$ 4.12$
10 - 16 3.61$ 3.90$
Quantity U.P
1 - 4 4.01$ 4.33$
5 - 9 3.81$ 4.12$
10 - 16 3.61$ 3.90$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 16
Set of 1

N-channel transistor, 6A, 300uA, 0.95 Ohms, TO-220FP, TO-220FP, 600V - 2SK1118-PMC. N-channel transistor, 6A, 300uA, 0.95 Ohms, TO-220FP, TO-220FP, 600V. ID (T=25°C): 6A. Idss (max): 300uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1400pF. Cost): 250pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 40 ns. Technology: Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Low Leakage Current Low Drain Source ON resistance. G-S Protection: no. Quantity in stock updated on 27/04/2025, 14:25.

Equivalent products :

Quantity in stock : 30
2SK2545

2SK2545

N-channel transistor, 3A, 6A, 100uA, 0.9 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 3A. ID (T=25...
2SK2545
N-channel transistor, 3A, 6A, 100uA, 0.9 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 100uA. On-resistance Rds On: 0.9 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. Marking on the case: K2545. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 45 ns. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes
2SK2545
N-channel transistor, 3A, 6A, 100uA, 0.9 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 100uA. On-resistance Rds On: 0.9 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. Marking on the case: K2545. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 45 ns. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes
Set of 1
3.90$ VAT incl.
(3.61$ excl. VAT)
3.90$
Quantity in stock : 25
2SK2645

2SK2645

N-channel transistor, 9A, 100nA, 1.2 Ohms, TO-220FP, TO-220F15, 600V. ID (T=25°C): 9A. Idss (max): ...
2SK2645
N-channel transistor, 9A, 100nA, 1.2 Ohms, TO-220FP, TO-220F15, 600V. ID (T=25°C): 9A. Idss (max): 100nA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 600V. C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 32A. IDss (min): 10nA. Marking on the case: K2645. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
2SK2645
N-channel transistor, 9A, 100nA, 1.2 Ohms, TO-220FP, TO-220F15, 600V. ID (T=25°C): 9A. Idss (max): 100nA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 600V. C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 32A. IDss (min): 10nA. Marking on the case: K2645. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
5.83$ VAT incl.
(5.39$ excl. VAT)
5.83$
Quantity in stock : 114
2SK1507

2SK1507

N-channel transistor, 9A, 500uA, 0.85 Ohms, TO-220FP, TO-220F, 600V. ID (T=25°C): 9A. Idss (max): 5...
2SK1507
N-channel transistor, 9A, 500uA, 0.85 Ohms, TO-220FP, TO-220F, 600V. ID (T=25°C): 9A. Idss (max): 500uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1200pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 27A. IDss (min): 10uA. Marking on the case: K1507. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 30 ns. Technology: F-II Series POWER MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Drain-source protection : yes. G-S Protection: no
2SK1507
N-channel transistor, 9A, 500uA, 0.85 Ohms, TO-220FP, TO-220F, 600V. ID (T=25°C): 9A. Idss (max): 500uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1200pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 27A. IDss (min): 10uA. Marking on the case: K1507. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 30 ns. Technology: F-II Series POWER MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Drain-source protection : yes. G-S Protection: no
Set of 1
2.63$ VAT incl.
(2.43$ excl. VAT)
2.63$

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