Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 5.00$ | 5.41$ |
5 - 9 | 4.75$ | 5.13$ |
10 - 24 | 4.60$ | 4.97$ |
25 - 49 | 4.50$ | 4.86$ |
50 - 99 | 4.40$ | 4.76$ |
100 - 249 | 4.25$ | 4.59$ |
250+ | 4.10$ | 4.43$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 5.00$ | 5.41$ |
5 - 9 | 4.75$ | 5.13$ |
10 - 24 | 4.60$ | 4.97$ |
25 - 49 | 4.50$ | 4.86$ |
50 - 99 | 4.40$ | 4.76$ |
100 - 249 | 4.25$ | 4.59$ |
250+ | 4.10$ | 4.43$ |
N-channel transistor, 4A, 300uA, 3 Ohms, TO-220, TO-220, 1000V - 2SK1119. N-channel transistor, 4A, 300uA, 3 Ohms, TO-220, TO-220, 1000V. ID (T=25°C): 4A. Idss (max): 300uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 1000V. C(in): 700pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 30 ns. Technology: N-channel MOSFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Original product from manufacturer Toshiba. Quantity in stock updated on 15/06/2025, 07:25.
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