Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.65$ | 5.03$ |
5 - 9 | 4.42$ | 4.78$ |
10 - 24 | 4.28$ | 4.63$ |
25 - 49 | 4.19$ | 4.53$ |
50 - 99 | 4.09$ | 4.42$ |
100 - 249 | 3.95$ | 4.27$ |
250+ | 3.81$ | 4.12$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.65$ | 5.03$ |
5 - 9 | 4.42$ | 4.78$ |
10 - 24 | 4.28$ | 4.63$ |
25 - 49 | 4.19$ | 4.53$ |
50 - 99 | 4.09$ | 4.42$ |
100 - 249 | 3.95$ | 4.27$ |
250+ | 3.81$ | 4.12$ |
N-channel transistor, 5A, 100uA, 2.3 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V - 2SK2610. N-channel transistor, 5A, 100uA, 2.3 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 2.3 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. C(in): 1200pF. Cost): 120pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed, H.V. G-S Protection: yes. Id(imp): 15A. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: Field Effect (TT-MOSIII). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Toshiba. Quantity in stock updated on 16/06/2025, 07:25.
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