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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 9A, 100uA, 1.1 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 900V - 2SK2611

N-channel transistor, 9A, 100uA, 1.1 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 900V - 2SK2611
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Quantity excl. VAT VAT incl.
1 - 1 8.60$ 9.30$
2 - 2 8.17$ 8.83$
3 - 4 7.74$ 8.37$
5 - 9 7.31$ 7.90$
10 - 19 7.14$ 7.72$
20 - 29 6.97$ 7.53$
30 - 51 6.71$ 7.25$
Quantity U.P
1 - 1 8.60$ 9.30$
2 - 2 8.17$ 8.83$
3 - 4 7.74$ 8.37$
5 - 9 7.31$ 7.90$
10 - 19 7.14$ 7.72$
20 - 29 6.97$ 7.53$
30 - 51 6.71$ 7.25$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 51
Set of 1

N-channel transistor, 9A, 100uA, 1.1 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 900V - 2SK2611. N-channel transistor, 9A, 100uA, 1.1 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 900V. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 900V. C(in): 2040pF. Cost): 190pF. Channel type: N. Trr Diode (Min.): 1.6us. Type of transistor: MOSFET. Function: High Speed, H.V. Id(imp): 27A. Marking on the case: K2611. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 95 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIII). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 28/04/2025, 00:25.

Technical documentation

Equivalent products :

Quantity in stock : 39
STW11NK100Z

STW11NK100Z

N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=...
STW11NK100Z
N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes
STW11NK100Z
N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes
Set of 1
7.90$ VAT incl.
(7.31$ excl. VAT)
7.90$

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