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N-channel transistor, 10A, 10A, 200uA, 0.73 Ohms, TO-220FP, TO-220F15, 500V - 2SK2640

N-channel transistor, 10A, 10A, 200uA, 0.73 Ohms, TO-220FP, TO-220F15, 500V - 2SK2640
Quantity excl. VAT VAT incl.
1 - 1 13.45$ 14.54$
2 - 2 12.77$ 13.80$
3 - 4 12.10$ 13.08$
5 - 9 11.43$ 12.36$
10 - 19 11.16$ 12.06$
20 - 29 10.89$ 11.77$
30+ 10.49$ 11.34$
Quantity U.P
1 - 1 13.45$ 14.54$
2 - 2 12.77$ 13.80$
3 - 4 12.10$ 13.08$
5 - 9 11.43$ 12.36$
10 - 19 11.16$ 12.06$
20 - 29 10.89$ 11.77$
30+ 10.49$ 11.34$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 10A, 10A, 200uA, 0.73 Ohms, TO-220FP, TO-220F15, 500V - 2SK2640. N-channel transistor, 10A, 10A, 200uA, 0.73 Ohms, TO-220FP, TO-220F15, 500V. ID (T=100°C): 10A. ID (T=25°C): 10A. Idss (max): 200uA. On-resistance Rds On: 0.73 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 500V. C(in): 950pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 40A. IDss (min): 10uA. Marking on the case: K2640. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 01:25.

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Quantity in stock : 17
STF11NM60ND

STF11NM60ND

N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID...
STF11NM60ND
N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no
STF11NM60ND
N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no
Set of 1
6.81$ VAT incl.
(6.30$ excl. VAT)
6.81$

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