Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.45$ | 14.54$ |
2 - 2 | 12.77$ | 13.80$ |
3 - 4 | 12.10$ | 13.08$ |
5 - 9 | 11.43$ | 12.36$ |
10 - 19 | 11.16$ | 12.06$ |
20 - 29 | 10.89$ | 11.77$ |
30+ | 10.49$ | 11.34$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.45$ | 14.54$ |
2 - 2 | 12.77$ | 13.80$ |
3 - 4 | 12.10$ | 13.08$ |
5 - 9 | 11.43$ | 12.36$ |
10 - 19 | 11.16$ | 12.06$ |
20 - 29 | 10.89$ | 11.77$ |
30+ | 10.49$ | 11.34$ |
N-channel transistor, 10A, 10A, 200uA, 0.73 Ohms, TO-220FP, TO-220F15, 500V - 2SK2640. N-channel transistor, 10A, 10A, 200uA, 0.73 Ohms, TO-220FP, TO-220F15, 500V. ID (T=100°C): 10A. ID (T=25°C): 10A. Idss (max): 200uA. On-resistance Rds On: 0.73 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 500V. C(in): 950pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 40A. IDss (min): 10uA. Marking on the case: K2640. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 01:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.