Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.19$ | 11.02$ |
2 - 2 | 9.68$ | 10.46$ |
3 - 4 | 9.17$ | 9.91$ |
5 - 9 | 8.66$ | 9.36$ |
10 - 19 | 8.46$ | 9.15$ |
20 - 29 | 8.26$ | 8.93$ |
30+ | 7.95$ | 8.59$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.19$ | 11.02$ |
2 - 2 | 9.68$ | 10.46$ |
3 - 4 | 9.17$ | 9.91$ |
5 - 9 | 8.66$ | 9.36$ |
10 - 19 | 8.46$ | 9.15$ |
20 - 29 | 8.26$ | 8.93$ |
30+ | 7.95$ | 8.59$ |
N-channel transistor, 4A, 4A, 200uA, 3.19 Ohms, TO-220, TO-220F15, 800V - 2SK2647. N-channel transistor, 4A, 4A, 200uA, 3.19 Ohms, TO-220, TO-220F15, 800V. ID (T=100°C): 4A. ID (T=25°C): 4A. Idss (max): 200uA. On-resistance Rds On: 3.19 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 800V. C(in): 450pF. Cost): 75pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: High Speed Switching. Id(imp): 16A. IDss (min): 10uA. Marking on the case: K2647. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 20 ns. Technology: FAP-IIS Series MOS-FET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 00:25.
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