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N-channel transistor, 5A, 100uA, 1.35 Ohms, TO-220FP, TO-220FP, 500V - 2SK2662

N-channel transistor, 5A, 100uA, 1.35 Ohms, TO-220FP, TO-220FP, 500V - 2SK2662
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Quantity excl. VAT VAT incl.
1 - 4 6.05$ 6.54$
5 - 9 5.75$ 6.22$
10 - 24 5.57$ 6.02$
25 - 49 5.45$ 5.89$
50 - 99 5.33$ 5.76$
100+ 5.02$ 5.43$
Quantity U.P
1 - 4 6.05$ 6.54$
5 - 9 5.75$ 6.22$
10 - 24 5.57$ 6.02$
25 - 49 5.45$ 5.89$
50 - 99 5.33$ 5.76$
100+ 5.02$ 5.43$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 5A, 100uA, 1.35 Ohms, TO-220FP, TO-220FP, 500V - 2SK2662. N-channel transistor, 5A, 100uA, 1.35 Ohms, TO-220FP, TO-220FP, 500V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 1.35 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 500V. C(in): 780pF. Cost): 200pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1400 ns. Type of transistor: MOSFET. Function: High Speed Switching, Zener-Protected. G-S Protection: yes. Id(imp): 20A. Marking on the case: K2662. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Technology: Field Effect Transistor (TT-MOS V). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Toshiba. Quantity in stock updated on 26/07/2025, 13:25.

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