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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 7A, 250uA, 1.46 Ohms, TO-220FP, TO-220F, 800V - 2SK3530-01MR

N-channel transistor, 7A, 7A, 250uA, 1.46 Ohms, TO-220FP, TO-220F, 800V - 2SK3530-01MR
Quantity excl. VAT VAT incl.
1 - 1 24.42$ 26.40$
2 - 2 23.20$ 25.08$
3 - 4 21.98$ 23.76$
5 - 9 20.76$ 22.44$
10 - 14 20.27$ 21.91$
15 - 19 19.78$ 21.38$
20+ 19.05$ 20.59$
Quantity U.P
1 - 1 24.42$ 26.40$
2 - 2 23.20$ 25.08$
3 - 4 21.98$ 23.76$
5 - 9 20.76$ 22.44$
10 - 14 20.27$ 21.91$
15 - 19 19.78$ 21.38$
20+ 19.05$ 20.59$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 7A, 7A, 250uA, 1.46 Ohms, TO-220FP, TO-220F, 800V - 2SK3530-01MR. N-channel transistor, 7A, 7A, 250uA, 1.46 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 7A. ID (T=25°C): 7A. Idss (max): 250uA. On-resistance Rds On: 1.46 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. C(in): 740pF. Cost): 105pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 2.3 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 28A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 21 ns. Technology: Super FAP-G Series POWER MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 67
FQPF9N90C

FQPF9N90C

N-channel transistor, 2.8A, 8A, 10uA, 1.12 Ohms, TO-220FP, TO-220F, 900V. ID (T=100°C): 2.8A. ID (T...
FQPF9N90C
N-channel transistor, 2.8A, 8A, 10uA, 1.12 Ohms, TO-220FP, TO-220F, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 10uA. On-resistance Rds On: 1.12 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 2100pF. Cost): 175pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Id(imp): 32A. IDss (min): 10uA. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 40nC, Low Crss 14pF. Spec info: Zero Gate Voltage Drain Current. G-S Protection: no
FQPF9N90C
N-channel transistor, 2.8A, 8A, 10uA, 1.12 Ohms, TO-220FP, TO-220F, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 10uA. On-resistance Rds On: 1.12 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 2100pF. Cost): 175pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Id(imp): 32A. IDss (min): 10uA. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 40nC, Low Crss 14pF. Spec info: Zero Gate Voltage Drain Current. G-S Protection: no
Set of 1
5.80$ VAT incl.
(5.37$ excl. VAT)
5.80$

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