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N-channel transistor, 5A, 5A, 100uA, 5A, 1.35 Ohms, TO-220FP, TO-220F, 500V - 2SK3563

N-channel transistor, 5A, 5A, 100uA, 5A, 1.35 Ohms, TO-220FP, TO-220F, 500V - 2SK3563
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Quantity excl. VAT VAT incl.
1 - 4 5.40$ 5.84$
5 - 9 5.13$ 5.55$
10 - 24 4.97$ 5.37$
25 - 49 4.86$ 5.25$
50 - 59 4.48$ 4.84$
Quantity U.P
1 - 4 5.40$ 5.84$
5 - 9 5.13$ 5.55$
10 - 24 4.97$ 5.37$
25 - 49 4.86$ 5.25$
50 - 59 4.48$ 4.84$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 59
Set of 1

N-channel transistor, 5A, 5A, 100uA, 5A, 1.35 Ohms, TO-220FP, TO-220F, 500V - 2SK3563. N-channel transistor, 5A, 5A, 100uA, 5A, 1.35 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 5A. ID (T=25°C): 5A. Idss: 100uA. Idss (max): 5A. On-resistance Rds On: 1.35 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 550pF. Cost): 70pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1400 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: yes. Id(imp): 20A. Marking on the case: K3563. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 20 ns. Technology: Field Effect (TT-MOSVI). Original product from manufacturer Toshiba. Quantity in stock updated on 16/06/2025, 01:25.

Equivalent products :

Quantity in stock : 80
2SK3562

2SK3562

N-channel transistor, 6A, 6A, 100uA, 6A, 0.9 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 6A. ID (T...
2SK3562
N-channel transistor, 6A, 6A, 100uA, 6A, 0.9 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 6A. ID (T=25°C): 6A. Idss: 100uA. Idss (max): 6A. On-resistance Rds On: 0.9 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1050pF. Cost): 110pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: yes. Id(imp): 24A. Marking on the case: K3562. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 40 ns. Technology: Field Effect (TT-MOSVI)
2SK3562
N-channel transistor, 6A, 6A, 100uA, 6A, 0.9 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 6A. ID (T=25°C): 6A. Idss: 100uA. Idss (max): 6A. On-resistance Rds On: 0.9 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1050pF. Cost): 110pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: yes. Id(imp): 24A. Marking on the case: K3562. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 40 ns. Technology: Field Effect (TT-MOSVI)
Set of 1
3.52$ VAT incl.
(3.26$ excl. VAT)
3.52$
Quantity in stock : 9
2SK2717

2SK2717

N-channel transistor, 5A, 100uA, 2.3 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 5A. Idss (max): 10...
2SK2717
N-channel transistor, 5A, 100uA, 2.3 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 2.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 1200pF. Cost): 20pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Function: High speed, High Voltage Switching, DC/DC Converters. G-S Protection: yes. Id(imp): 15A. Marking on the case: K2717. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: Field Effect Transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
2SK2717
N-channel transistor, 5A, 100uA, 2.3 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 2.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 1200pF. Cost): 20pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Function: High speed, High Voltage Switching, DC/DC Converters. G-S Protection: yes. Id(imp): 15A. Marking on the case: K2717. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: Field Effect Transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
16.05$ VAT incl.
(14.85$ excl. VAT)
16.05$

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