Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 8.93$ | 9.65$ |
2 - 2 | 8.48$ | 9.17$ |
3 - 4 | 8.04$ | 8.69$ |
5 - 9 | 7.59$ | 8.20$ |
10 - 19 | 7.41$ | 8.01$ |
20 - 29 | 7.23$ | 7.82$ |
30 - 47 | 6.97$ | 7.53$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 8.93$ | 9.65$ |
2 - 2 | 8.48$ | 9.17$ |
3 - 4 | 8.04$ | 8.69$ |
5 - 9 | 7.59$ | 8.20$ |
10 - 19 | 7.41$ | 8.01$ |
20 - 29 | 7.23$ | 7.82$ |
30 - 47 | 6.97$ | 7.53$ |
N-channel transistor, 9A, 250uA, 1.22 Ohms, TO-220FP, TO-220F, 900V - 2SK3679. N-channel transistor, 9A, 250uA, 1.22 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 9A. Idss (max): 250uA. On-resistance Rds On: 1.22 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 1100pF. Cost): 140pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 3.2us. Type of transistor: MOSFET. Function: High Speed Switching. Id(imp): 36A. IDss (min): 25uA. Marking on the case: K3679. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 95W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 25 ns. Technology: POWER MOSFET Super FAP-G Series. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 08:25.
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