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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 9A, 9A, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V - 2SK956

N-channel transistor, 9A, 9A, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V - 2SK956
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 8.15$ 8.81$
2 - 2 7.74$ 8.37$
3 - 4 7.33$ 7.92$
5 - 9 6.93$ 7.49$
10 - 19 6.76$ 7.31$
20 - 29 6.60$ 7.13$
30+ 6.36$ 6.88$
Quantity U.P
1 - 1 8.15$ 8.81$
2 - 2 7.74$ 8.37$
3 - 4 7.33$ 7.92$
5 - 9 6.93$ 7.49$
10 - 19 6.76$ 7.31$
20 - 29 6.60$ 7.13$
30+ 6.36$ 6.88$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 9A, 9A, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V - 2SK956. N-channel transistor, 9A, 9A, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 1 Ohm. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 26A. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Technology: F-II Series POWER MOSFET. Quantity in stock updated on 28/04/2025, 09:25.

Equivalent products :

Quantity in stock : 3
FQA10N80C

FQA10N80C

N-channel transistor, 6.32A, 10A, 100uA, 0.93 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C):...
FQA10N80C
N-channel transistor, 6.32A, 10A, 100uA, 0.93 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.93 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Id(imp): 40A. IDss (min): 10uA. Marking on the case: FQA10N80C. Pd (Power Dissipation, Max): 240W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no
FQA10N80C
N-channel transistor, 6.32A, 10A, 100uA, 0.93 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.93 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Id(imp): 40A. IDss (min): 10uA. Marking on the case: FQA10N80C. Pd (Power Dissipation, Max): 240W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no
Set of 1
8.26$ VAT incl.
(7.64$ excl. VAT)
8.26$

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