N-channel transistor BS107, TO-92, 120mA, 30nA, 15 Ohms, TO-92, 200V

N-channel transistor BS107, TO-92, 120mA, 30nA, 15 Ohms, TO-92, 200V

Quantity
Unit price
1-4
1.29$
5-24
1.11$
25-49
1.00$
50-99
0.91$
100+
0.80$
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Equivalence available
Quantity in stock: 162

N-channel transistor BS107, TO-92, 120mA, 30nA, 15 Ohms, TO-92, 200V. Housing: TO-92. ID (T=25°C): 120mA. Idss (max): 30nA. On-resistance Rds On: 15 Ohms. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 85pF. Channel type: N. Cost): 20pF. Diode Tff(25°C): 8 ns. Drain current: 250mA. Drain-source protection: yes. Drain-source voltage: 200V. G-S Protection: no. Gate/source voltage Vgs: 20V. Id(imp): 2A. Marking on the case: BS107. Number of terminals: 3. On-state resistance: 6.4 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.5W. Polarity: unipolar. Quantity per case: 1. RoHS: yes. Td(off): 16 ns. Td(on): 7 ns. Technology: ENHANCEMENT MODE VERTICAL DMOSFET. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Diodes Inc. Quantity in stock updated on 13/11/2025, 13:31

Technical documentation (PDF)
BS107
32 parameters
Housing
TO-92
ID (T=25°C)
120mA
Idss (max)
30nA
On-resistance Rds On
15 Ohms
Housing (according to data sheet)
TO-92
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
85pF
Channel type
N
Cost)
20pF
Diode Tff(25°C)
8 ns
Drain current
250mA
Drain-source protection
yes
Drain-source voltage
200V
G-S Protection
no
Gate/source voltage Vgs
20V
Id(imp)
2A
Marking on the case
BS107
Number of terminals
3
On-state resistance
6.4 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.5W
Polarity
unipolar
Quantity per case
1
RoHS
yes
Td(off)
16 ns
Td(on)
7 ns
Technology
ENHANCEMENT MODE VERTICAL DMOSFET
Type of transistor
MOSFET
Vgs(th) max.
3V
Vgs(th) min.
1V
Original product from manufacturer
Diodes Inc.

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