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N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V - FGA60N65SMD

N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V - FGA60N65SMD
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Quantity excl. VAT VAT incl.
1 - 1 14.04$ 15.18$
2 - 2 13.34$ 14.42$
3 - 4 12.63$ 13.65$
5 - 9 11.93$ 12.90$
10 - 19 11.65$ 12.59$
20 - 29 11.37$ 12.29$
30 - 38 10.95$ 11.84$
Quantity U.P
1 - 1 14.04$ 15.18$
2 - 2 13.34$ 14.42$
3 - 4 12.63$ 13.65$
5 - 9 11.93$ 12.90$
10 - 19 11.65$ 12.59$
20 - 29 11.37$ 12.29$
30 - 38 10.95$ 11.84$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 38
Set of 1

N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V - FGA60N65SMD. N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V. Ic(T=100°C): 60A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 650V. C(in): 2915pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 47ms. Collector current: 60.4k Ohms. Ic(pulse): 180A. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 104 ns. Td(on): 18 ns. Technology: 'Field Stop IGBT'. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. CE diode: yes. Germanium diode: no. Quantity in stock updated on 28/04/2025, 22:25.

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