N-channel transistor, 25A, Other, Other, 1200V - FP25R12W2T4

Quantity	excl. VAT	VAT incl.
1 - 1	103.93$	112.35$
2 - 2	98.73$	106.73$
3 - 4	93.54$	101.12$
5 - 9	88.34$	95.50$
10 - 14	86.26$	93.25$
15 - 19	84.18$	91.00$
20+	81.07$	87.64$

Quantity	U.P
1 - 1	103.93$	112.35$
2 - 2	98.73$	106.73$
3 - 4	93.54$	101.12$
5 - 9	88.34$	95.50$
10 - 14	86.26$	93.25$
15 - 19	84.18$	91.00$
20+	81.07$	87.64$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

N-channel transistor, 25A, Other, Other, 1200V - FP25R12W2T4. N-channel transistor, 25A, Other, Other, 1200V. Ic(T=100°C): 25A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 1.45pF. Channel type: N. Collector current: 39A. Ic(pulse): 50A. Dimensions: 56.7x48x12mm. Pd (Power Dissipation, Max): 175W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.46 ns. Td(on): 0.08 ns. Technology: IGBT Hybrid module. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.2V. Gate/emitter voltage VGE(th)max.: 6.4V. Function: ICRM--50A Tp=1mS, Tc=25°C. Number of terminals: 33dB. Note: 7x IGBT+ CE Diode. CE diode: yes. Germanium diode: no. Quantity in stock updated on 28/04/2025, 21:25.

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