N-channel transistor FQAF11N90C, TO-3PF (SOT399, 2-16E3A), 900V, 4.4A, 7A, 100uA, 0.91 Ohms, TO-3PF, 900V. Housing: TO-3PF (SOT399, 2-16E3A). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 900V. ID (T=100°C): 4.4A. ID (T=25°C): 7A. Idss (max): 100uA. On-resistance Rds On: 0.91 Ohms. Housing (according to data sheet): TO-3PF. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 2530pF. Channel type: N. Ciss Gate Capacitance [pF]: 3290pF. Component family: MOSFET, N-MOS. Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Cost): 215pF. Drain current Id (A) @ 25°C: 7.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 3.6A. Drain-source protection: diode. Function: Fast switching, Low Gate Charge. G-S Protection: no. Gate breakdown voltage Ugs [V]: 5V. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 28A. Manufacturer's marking: FQAF11N90C. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 120W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 120W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 270 ns. Switch-on time ton [nsec.]: 130 ns. Td(off): 130 ns. Td(on): 60 ns. Technology: DMOS, QFET. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Fairchild. Quantity in stock updated on 13/11/2025, 16:41