Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.69$ | 3.99$ |
5 - 9 | 3.51$ | 3.79$ |
10 - 24 | 3.32$ | 3.59$ |
25 - 45 | 3.14$ | 3.39$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.69$ | 3.99$ |
5 - 9 | 3.51$ | 3.79$ |
10 - 24 | 3.32$ | 3.59$ |
25 - 45 | 3.14$ | 3.39$ |
N-channel transistor, 23A, 33A, 10uA, 0.04 Ohms, TO-220, TO-220, 100V - FQP33N10. N-channel transistor, 23A, 33A, 10uA, 0.04 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1150pF. Cost): 320pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 132A. IDss (min): 1uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Pd (Power Dissipation, Max): 127W. Function: Fast switching, Low Gate Charge. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 29/04/2025, 01:25.
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