Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 414.59$ | 448.17$ |
2 - 2 | 393.86$ | 425.76$ |
3 - 4 | 385.57$ | 416.80$ |
5 - 9 | 377.28$ | 407.84$ |
10 - 14 | 373.13$ | 403.35$ |
15 - 19 | 368.98$ | 398.87$ |
20+ | 364.84$ | 394.39$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 414.59$ | 448.17$ |
2 - 2 | 393.86$ | 425.76$ |
3 - 4 | 385.57$ | 416.80$ |
5 - 9 | 377.28$ | 407.84$ |
10 - 14 | 373.13$ | 403.35$ |
15 - 19 | 368.98$ | 398.87$ |
20+ | 364.84$ | 394.39$ |
N-channel transistor, 75A, Other, Other, 1200V - FS75R12KE3GBOSA1. N-channel transistor, 75A, Other, Other, 1200V. Ic(T=100°C): 75A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 5300pF. CE diode: yes. Channel type: N. Function: ICRM 150A Tp=1ms. Germanium diode: no. Collector current: 100A. Ic(pulse): 150A. Note: 6x IGBT+ CE Diode. Marking on the case: FS75R12KE3G. Number of terminals: 35. Dimensions: 122x62x17.5mm. Pd (Power Dissipation, Max): 355W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42us. Td(on): 26us. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 2.15V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Original product from manufacturer Eupec/infineon. Quantity in stock updated on 17/06/2025, 13:25.
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