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N-channel transistor, 75A, Other, Other, 1200V - FS75R12KE3GBOSA1

N-channel transistor, 75A, Other, Other, 1200V - FS75R12KE3GBOSA1
Quantity excl. VAT VAT incl.
1 - 1 414.59$ 448.17$
2 - 2 393.86$ 425.76$
3 - 4 385.57$ 416.80$
5 - 9 377.28$ 407.84$
10 - 14 373.13$ 403.35$
15 - 19 368.98$ 398.87$
20+ 364.84$ 394.39$
Quantity U.P
1 - 1 414.59$ 448.17$
2 - 2 393.86$ 425.76$
3 - 4 385.57$ 416.80$
5 - 9 377.28$ 407.84$
10 - 14 373.13$ 403.35$
15 - 19 368.98$ 398.87$
20+ 364.84$ 394.39$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 75A, Other, Other, 1200V - FS75R12KE3GBOSA1. N-channel transistor, 75A, Other, Other, 1200V. Ic(T=100°C): 75A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 5300pF. CE diode: yes. Channel type: N. Function: ICRM 150A Tp=1ms. Germanium diode: no. Collector current: 100A. Ic(pulse): 150A. Note: 6x IGBT+ CE Diode. Marking on the case: FS75R12KE3G. Number of terminals: 35. Dimensions: 122x62x17.5mm. Pd (Power Dissipation, Max): 355W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42us. Td(on): 26us. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 2.15V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Original product from manufacturer Eupec/infineon. Quantity in stock updated on 17/06/2025, 13:25.

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