Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 9.17$ | 9.91$ |
2 - 2 | 8.71$ | 9.42$ |
3 - 4 | 8.52$ | 9.21$ |
5 - 9 | 10.86$ | 11.74$ |
10 - 19 | 12.53$ | 13.54$ |
20 - 29 | 13.03$ | 14.09$ |
30 - 170 | 12.86$ | 13.90$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 9.17$ | 9.91$ |
2 - 2 | 8.71$ | 9.42$ |
3 - 4 | 8.52$ | 9.21$ |
5 - 9 | 10.86$ | 11.74$ |
10 - 19 | 12.53$ | 13.54$ |
20 - 29 | 13.03$ | 14.09$ |
30 - 170 | 12.86$ | 13.90$ |
N-channel transistor, TO-247, 23A, TO-247 ( AC ), 600V - HGTG12N60A4D. N-channel transistor, TO-247, 23A, TO-247 ( AC ), 600V. Housing: TO-247. Ic(T=100°C): 23A. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS, IGBT with Anti-Parallel Hyperfast Diode. Germanium diode: no. Production date: 2014/17. Collector current: 54A. Ic(pulse): 96A. Marking on the case: 12N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. Spec info: >100kHz, 390V, 12A. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 17 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.6V. Gate/emitter voltage VGE(th)max.: 5.6V. Original product from manufacturer Onsemi (fairchild). Quantity in stock updated on 17/06/2025, 13:25.
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