N-channel transistor HUF76121D3S, 20A, 20A, 250uA, 0.017 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 30 v

N-channel transistor HUF76121D3S, 20A, 20A, 250uA, 0.017 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 30 v

Quantity
Unit price
1-4
2.14$
5-49
1.77$
50-99
1.50$
100+
1.33$
Quantity in stock: 95

N-channel transistor HUF76121D3S, 20A, 20A, 250uA, 0.017 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 30 v. ID (T=100°C): 20A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.017 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AA ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 850pF. Channel type: N. Cost): 465pF. Drain-source protection: zener diode. Function: Gate control by logic level. G-S Protection: no. Gate/source voltage Vgs: 16V. IDss (min): 1uA. Marking on the case: 76121D. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 75W. Quantity per case: 1. Td(off): 45 ns. Td(on): 6 ns. Technology: UltraFET Power MOSFET. Trr Diode (Min.): 58 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Intersil. Quantity in stock updated on 13/11/2025, 20:19

Technical documentation (PDF)
HUF76121D3S
29 parameters
ID (T=100°C)
20A
ID (T=25°C)
20A
Idss (max)
250uA
On-resistance Rds On
0.017 Ohms
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK ( TO-252AA )
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
850pF
Channel type
N
Cost)
465pF
Drain-source protection
zener diode
Function
Gate control by logic level
G-S Protection
no
Gate/source voltage Vgs
16V
IDss (min)
1uA
Marking on the case
76121D
Number of terminals
2
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
75W
Quantity per case
1
Td(off)
45 ns
Td(on)
6 ns
Technology
UltraFET Power MOSFET
Trr Diode (Min.)
58 ns
Type of transistor
MOSFET
Vgs(th) max.
3V
Vgs(th) min.
1V
Original product from manufacturer
Intersil