Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 19.84$ | 21.45$ |
2 - 2 | 18.84$ | 20.37$ |
3 - 4 | 17.85$ | 19.30$ |
5 - 9 | 16.86$ | 18.23$ |
10 - 14 | 16.46$ | 17.79$ |
15 - 19 | 16.07$ | 17.37$ |
20 - 26 | 15.47$ | 16.72$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 19.84$ | 21.45$ |
2 - 2 | 18.84$ | 20.37$ |
3 - 4 | 17.85$ | 19.30$ |
5 - 9 | 16.86$ | 18.23$ |
10 - 14 | 16.46$ | 17.79$ |
15 - 19 | 16.07$ | 17.37$ |
20 - 26 | 15.47$ | 16.72$ |
N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V - IGW75N60H3. N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 75A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 4620pF. Cost): 240pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Very low VCEsat. Collector current: 140A. Ic(pulse): 225A. Marking on the case: G75H603. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Delivery time: KB. Assembly/installation: PCB through-hole mounting. Td(off): 265 ns. Td(on): 31 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: no. Germanium diode: no. Quantity in stock updated on 29/04/2025, 05:25.
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