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N-channel transistor, 20A, TO-247, TO-247AC, 1200V - IHW20N120R3

N-channel transistor, 20A, TO-247, TO-247AC, 1200V - IHW20N120R3
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Quantity excl. VAT VAT incl.
1 - 1 11.54$ 12.47$
2 - 2 10.97$ 11.86$
3 - 4 10.62$ 11.48$
5 - 9 10.39$ 11.23$
10 - 19 10.16$ 10.98$
20 - 29 9.81$ 10.60$
30+ 9.47$ 10.24$
Quantity U.P
1 - 1 11.54$ 12.47$
2 - 2 10.97$ 11.86$
3 - 4 10.62$ 11.48$
5 - 9 10.39$ 11.23$
10 - 19 10.16$ 10.98$
20 - 29 9.81$ 10.60$
30+ 9.47$ 10.24$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 20A, TO-247, TO-247AC, 1200V - IHW20N120R3. N-channel transistor, 20A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. C(in): 1503pF. Cost): 50pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive Cooking. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20R1203. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Spec info: Reverse conducting IGBT with monolithic body diode. Assembly/installation: PCB through-hole mounting. Td(off): 387 ns. Td(on): 359 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.48V. Maximum saturation voltage VCE(sat): 1.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V. Gate/emitter voltage VGE(th)max.: 6.4V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 17/06/2025, 13:25.

Equivalent products :

Quantity in stock : 48
IHW20N120R5

IHW20N120R5

N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (a...
IHW20N120R5
N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1200V. C(in): 1340pF. Cost): 43pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 90 ns. Function: Powerful monolithic body diode with low forward voltage. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20MR5. Number of terminals: 3. Pd (Power Dissipation, Max): 288W. RoHS: yes. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 350 ns. Td(on): 260 ns. Technology: TRENCHSTOP TM technology. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 1.75V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V
IHW20N120R5
N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1200V. C(in): 1340pF. Cost): 43pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 90 ns. Function: Powerful monolithic body diode with low forward voltage. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20MR5. Number of terminals: 3. Pd (Power Dissipation, Max): 288W. RoHS: yes. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 350 ns. Td(on): 260 ns. Technology: TRENCHSTOP TM technology. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 1.75V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V
Set of 1
9.57$ VAT incl.
(8.85$ excl. VAT)
9.57$

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