Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 11.54$ | 12.47$ |
2 - 2 | 10.97$ | 11.86$ |
3 - 4 | 10.62$ | 11.48$ |
5 - 9 | 10.39$ | 11.23$ |
10 - 19 | 10.16$ | 10.98$ |
20 - 29 | 9.81$ | 10.60$ |
30+ | 9.47$ | 10.24$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 11.54$ | 12.47$ |
2 - 2 | 10.97$ | 11.86$ |
3 - 4 | 10.62$ | 11.48$ |
5 - 9 | 10.39$ | 11.23$ |
10 - 19 | 10.16$ | 10.98$ |
20 - 29 | 9.81$ | 10.60$ |
30+ | 9.47$ | 10.24$ |
N-channel transistor, 20A, TO-247, TO-247AC, 1200V - IHW20N120R3. N-channel transistor, 20A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. C(in): 1503pF. Cost): 50pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive Cooking. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20R1203. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Spec info: Reverse conducting IGBT with monolithic body diode. Assembly/installation: PCB through-hole mounting. Td(off): 387 ns. Td(on): 359 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.48V. Maximum saturation voltage VCE(sat): 1.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V. Gate/emitter voltage VGE(th)max.: 6.4V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 17/06/2025, 13:25.
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