N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V - IHW20N120R5

Quantity	excl. VAT	VAT incl.
1 - 1	8.85$	9.57$
2 - 2	8.41$	9.09$
3 - 4	7.97$	8.62$
5 - 9	7.52$	8.13$
10 - 19	7.35$	7.95$
20 - 29	7.17$	7.75$
30 - 51	6.91$	7.47$

Quantity	U.P
1 - 1	8.85$	9.57$
2 - 2	8.41$	9.09$
3 - 4	7.97$	8.62$
5 - 9	7.52$	8.13$
10 - 19	7.35$	7.95$
20 - 29	7.17$	7.75$
30 - 51	6.91$	7.47$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 51

Set of 1

N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V - IHW20N120R5. N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1200V. C(in): 1340pF. Cost): 43pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 90 ns. Function: Powerful monolithic body diode with low forward voltage. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20MR5. Number of terminals: 3. Pd (Power Dissipation, Max): 288W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 350 ns. Td(on): 260 ns. Technology: TRENCHSTOP TM technology. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 1.75V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). CE diode: yes. Germanium diode: no. Quantity in stock updated on 29/04/2025, 06:25.