N-channel transistor IHW20N135R3, 20A, TO-247, TO-247-3, 1350V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247-3. Collector/emitter voltage Vceo: 1350V. Assembly/installation: PCB through-hole mounting. C(in): 1500pF. CE diode: yes. Channel type: N. Collector current: 40A. Conditioning unit: 30. Conditioning: plastic tube. Cost): 55pF. Function: Inductive?cooking. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 60A. Marking on the case: H20R1353. Maximum saturation voltage VCE(sat): 1.8V. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 310W. RoHS: yes. Saturation voltage VCE(sat): 1.6V. Spec info: Reverse conducting IGBT with monolithic body diode. Td(off): 405 ns. Td(on): 335 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 13/11/2025, 01:35