Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.66$ | 14.77$ |
2 - 2 | 12.98$ | 14.03$ |
3 - 4 | 12.30$ | 13.30$ |
5 - 9 | 11.61$ | 12.55$ |
10 - 19 | 11.34$ | 12.26$ |
20 - 29 | 11.07$ | 11.97$ |
30 - 54 | 10.14$ | 10.96$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.66$ | 14.77$ |
2 - 2 | 12.98$ | 14.03$ |
3 - 4 | 12.30$ | 13.30$ |
5 - 9 | 11.61$ | 12.55$ |
10 - 19 | 11.34$ | 12.26$ |
20 - 29 | 11.07$ | 11.97$ |
30 - 54 | 10.14$ | 10.96$ |
N-channel transistor, 50A, TO-247, TO-247 ( AC ), 600V - IKW50N60T. N-channel transistor, 50A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 50A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 3140pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 143 ns. Function: Very low VCEsat. Collector current: 80A. Ic(pulse): 150A. Marking on the case: K50T60. Number of terminals: 3. Pd (Power Dissipation, Max): 333W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 299 ns. Td(on): 26 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: yes. Germanium diode: no. Quantity in stock updated on 29/04/2025, 06:25.
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