N-channel transistor IPA60R600E6, 4.6A, 7.3A, 10uA, 0.54 Ohms, TO-220FP, TO-220FP-3, 650V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 10uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 440pF. Channel type: N. Cost): 30pF. Drain-source protection: yes. Function: ID pulse 19A. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 19A. Marking on the case: 6R600E6. Note: completely insulated housing (2500VAC/60s). Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 28W. Quantity per case: 1. RoHS: yes. Td(off): 58 ns. Td(on): 10 ns. Technology: Cool Mos E6 POWER trafnsistor. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 12/11/2025, 23:00