Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.76$ | 4.06$ |
5 - 9 | 3.57$ | 3.86$ |
10 - 24 | 3.38$ | 3.65$ |
25 - 49 | 3.19$ | 3.45$ |
50 - 57 | 3.12$ | 3.37$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.76$ | 4.06$ |
5 - 9 | 3.57$ | 3.86$ |
10 - 24 | 3.38$ | 3.65$ |
25 - 49 | 3.19$ | 3.45$ |
50 - 57 | 3.12$ | 3.37$ |
N-channel transistor, 3.6A, 5.7A, 50uA, 0.83 Ohms, TO-220FP, TO-220FP-3, 800V - IPA80R1K0CEXKSA2. N-channel transistor, 3.6A, 5.7A, 50uA, 0.83 Ohms, TO-220FP, TO-220FP-3, 800V. ID (T=100°C): 3.6A. ID (T=25°C): 5.7A. Idss (max): 50uA. On-resistance Rds On: 0.83 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Voltage Vds(max): 800V. C(in): 785pF. Cost): 33pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: ID pulse 18A. Id(imp): 18A. IDss (min): 10uA. Note: completely insulated housing (2500VAC/60s). Marking on the case: 8R1K0CE. Number of terminals: 3. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos E6 POWER trafnsistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: -20V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 29/04/2025, 05:25.
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