Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 7.35$ | 7.95$ |
5 - 9 | 6.98$ | 7.55$ |
10 - 24 | 6.61$ | 7.15$ |
25 - 44 | 6.25$ | 6.76$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 7.35$ | 7.95$ |
5 - 9 | 6.98$ | 7.55$ |
10 - 24 | 6.61$ | 7.15$ |
25 - 44 | 6.25$ | 6.76$ |
N-channel transistor, 2.1M Ohms, D2PAK ( TO-263 ), TO263-7 - IPB014N06NATMA1. N-channel transistor, 2.1M Ohms, D2PAK ( TO-263 ), TO263-7. On-resistance Rds On: 2.1M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO263-7. Channel type: N. Conditioning: roll. Quantity per case: 1. Type of transistor: MOSFET. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: OptiMOS Power. Operating temperature: -55...+175°C. Quantity in stock updated on 29/04/2025, 06:25.
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