N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V - IPI80N06S2-08

N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V - IPI80N06S2-08. N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 6.5m Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 55V. C(in): 2860pF. Cost): 740pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. G-S Protection: no. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 2N0608. Number of terminals: 3. Pd (Power Dissipation, Max): 215W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 14 ns. Technology: MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 17/06/2025, 16:25.