Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.30$ | 4.65$ |
5 - 9 | 4.09$ | 4.42$ |
10 - 24 | 3.87$ | 4.18$ |
25 - 49 | 3.66$ | 3.96$ |
50 - 59 | 3.57$ | 3.86$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.30$ | 4.65$ |
5 - 9 | 4.09$ | 4.42$ |
10 - 24 | 3.87$ | 4.18$ |
25 - 49 | 3.66$ | 3.96$ |
50 - 59 | 3.57$ | 3.86$ |
N-channel transistor, 43A, 75A, 250uA, 3.9M Ohms, TO-220, TO-220AB, 55V - IRF2805. N-channel transistor, 43A, 75A, 250uA, 3.9M Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 43A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 3.9M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 5110pF. Cost): 1190pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: Fast Switching, Automotive applications. Id(imp): 700A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 29/04/2025, 12:25.
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