Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.73$ | 2.95$ |
5 - 9 | 2.59$ | 2.80$ |
10 - 24 | 2.46$ | 2.66$ |
25 - 49 | 2.32$ | 2.51$ |
50 - 99 | 2.47$ | 2.67$ |
100 - 184 | 2.65$ | 2.86$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.73$ | 2.95$ |
5 - 9 | 2.59$ | 2.80$ |
10 - 24 | 2.46$ | 2.66$ |
25 - 49 | 2.32$ | 2.51$ |
50 - 99 | 2.47$ | 2.67$ |
100 - 184 | 2.65$ | 2.86$ |
N-channel transistor, 75V, 82A, 0.013 Ohms, TO-220, 75V - IRF2807PBF. N-channel transistor, 75V, 82A, 0.013 Ohms, TO-220, 75V. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 82A. On-resistance Rds On: 0.013 Ohms. Housing: TO-220. Drain-source voltage (Vds): 75V. Manufacturer's marking: IRF2807PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ 43A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 3820pF. Maximum dissipation Ptot [W]: 230W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 82A. Power: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Quantity in stock updated on 29/04/2025, 10:25.
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