N-channel transistor IRF3205S, 80A, 110A, 250nA, 0.008 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 80A. ID (T=25°C): 110A. Idss (max): 250nA. On-resistance Rds On: 0.008 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 3247pF. Channel type: N. Cost): 781pF. Drain-source protection: yes. Equivalents: IRF3205SPBF. Function: 'Advanced Process Technology'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25nA. Id(imp): 390A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Td(off): 50 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 12/11/2025, 23:00