Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.87$ | 5.26$ |
5 - 9 | 3.11$ | 3.36$ |
10 - 10 | 2.79$ | 3.02$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.87$ | 5.26$ |
5 - 9 | 3.11$ | 3.36$ |
10 - 10 | 2.79$ | 3.02$ |
IRF3710Z. ROHS: Yes. Housing: TO220, TO220AB. Power: 160W. Assembly/installation: THT. Type of transistor: N-MOSFET, HEXFET. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: 100V. Drain current: 59A. On-state resistance: 18m Ohms. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 920mK/W. Charge: 82nC. Conditioning: tubus. Original product from manufacturer Infineon (irf). Quantity in stock updated on 12/08/2025, 14:08.
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