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N-channel transistor, SO, SO-8 - IRF7341

N-channel transistor, SO, SO-8 - IRF7341
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.42$ 1.54$
5 - 9 1.34$ 1.45$
10 - 24 1.27$ 1.37$
25 - 49 1.20$ 1.30$
50 - 99 1.17$ 1.26$
100 - 174 1.15$ 1.24$
Quantity U.P
1 - 4 1.42$ 1.54$
5 - 9 1.34$ 1.45$
10 - 24 1.27$ 1.37$
25 - 49 1.20$ 1.30$
50 - 99 1.17$ 1.26$
100 - 174 1.15$ 1.24$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 174
Set of 1

N-channel transistor, SO, SO-8 - IRF7341. N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N. Conditioning: plastic tube. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Quantity per case: 2. Conditioning unit: 95. Function: tf 13ns, td(on) 8.3ns, td(off) 32ns. Quantity in stock updated on 29/04/2025, 21:25.

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N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: ...
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N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N. Function: 2xN-CH 60V. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: STripFET™ Power MOSFET. Quantity per case: 2
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N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N. Function: 2xN-CH 60V. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: STripFET™ Power MOSFET. Quantity per case: 2
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