N-channel transistor, 190A, 270A, 250uA, 0.0021 Ohms, TO-220, TO-220AB, 60V - IRFB3006

N-channel transistor, 190A, 270A, 250uA, 0.0021 Ohms, TO-220, TO-220AB, 60V - IRFB3006. N-channel transistor, 190A, 270A, 250uA, 0.0021 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 190A. ID (T=25°C): 270A. Idss (max): 250uA. On-resistance Rds On: 0.0021 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 8970pF. Cost): 1020pF. Channel type: N. Trr Diode (Min.): 44 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 1080A. IDss (min): 20uA. Pd (Power Dissipation, Max): 375W. Assembly/installation: PCB through-hole mounting. Td(off): 118 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 29/04/2025, 21:25.