Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.92$ | 4.24$ |
5 - 9 | 3.73$ | 4.03$ |
10 - 24 | 3.61$ | 3.90$ |
25 - 49 | 3.53$ | 3.82$ |
50 - 99 | 3.45$ | 3.73$ |
100 - 249 | 3.34$ | 3.61$ |
250+ | 3.22$ | 3.48$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.92$ | 4.24$ |
5 - 9 | 3.73$ | 4.03$ |
10 - 24 | 3.61$ | 3.90$ |
25 - 49 | 3.53$ | 3.82$ |
50 - 99 | 3.45$ | 3.73$ |
100 - 249 | 3.34$ | 3.61$ |
250+ | 3.22$ | 3.48$ |
N-channel transistor, 21A, 31A, 250uA, 0.082 Ohms, TO-220, TO-220AB, 200V - IRFB31N20D. N-channel transistor, 21A, 31A, 250uA, 0.082 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 21A. ID (T=25°C): 31A. Idss (max): 250uA. On-resistance Rds On: 0.082 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 2370pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: SMPS, High frequency DC-DC converters. G-S Protection: no. Id(imp): 124A. IDss (min): 25uA. Marking on the case: FB32N20D. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Original product from manufacturer International Rectifier. Quantity in stock updated on 18/06/2025, 08:25.
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